IGN1011L70

Hersteller-Teilenummer
IGN1011L70
Hersteller
Integra Technologies
Paket/Karton
-
Datenblatt
Herunterladen
Beschreibung
GAN, RF POWER TRANSISTOR, L-BAND
Lagerbestand
11

Angebot anfordern (RFQ)

* Kontaktname:
  Unternehmen:
* E-Mail:
  Telefon:
  Kommentar:
Hersteller :
Integra Technologies
Produktkategorie :
Transistors - FETs, MOSFETs - RF
Current - Test :
22 mA
Current Rating (Amps) :
-
Frequency :
1.03GHz ~ 1.09GHz
Gain :
22dB
Noise Figure :
-
Package / Case :
PL32A2
Power - Output :
80W
Product Status :
Active
Supplier Device Package :
PL32A2
Transistor Type :
GaN HEMT
Voltage - Rated :
120 V
Voltage - Test :
50 V
Datenblätter
IGN1011L70

Herstellerbezogene Produkte

  • Integra Technologies
    GAN, RF POWER TRANSISTOR, L-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, X-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, C-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, L-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, S-BAND

Katalogbezogene Produkte

Ähnliche Produkte

Teil Hersteller Lagerbestand Beschreibung
IGN1011L1200 Integra Technologies 15 GAN, RF POWER TRANSISTOR, L-BAND
IGN1214L500B Integra Technologies 1 GAN, RF POWER TRANSISTOR, L-BAND
IGN1214M300 Integra Technologies 10 GAN, RF POWER TRANSISTOR, L-BAND