IGN1011L1200

Hersteller-Teilenummer
IGN1011L1200
Hersteller
Integra Technologies
Paket/Karton
-
Datenblatt
Herunterladen
Beschreibung
GAN, RF POWER TRANSISTOR, L-BAND
Lagerbestand
15

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Hersteller :
Integra Technologies
Produktkategorie :
Transistors - FETs, MOSFETs - RF
Current - Test :
160 mA
Current Rating (Amps) :
-
Frequency :
1.03GHz ~ 1.09GHz
Gain :
16.8dB
Noise Figure :
-
Package / Case :
PL84A1
Power - Output :
1250W
Product Status :
Active
Supplier Device Package :
PL84A1
Transistor Type :
HEMT
Voltage - Rated :
180 V
Voltage - Test :
50 V
Datenblätter
IGN1011L1200

Herstellerbezogene Produkte

  • Integra Technologies
    GAN, RF POWER TRANSISTOR, L-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, X-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, C-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, L-BAND
  • Integra Technologies
    GAN, RF POWER TRANSISTOR, S-BAND

Katalogbezogene Produkte

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