W949D6DBHX5E TR

Hersteller-Teilenummer
W949D6DBHX5E TR
Hersteller
Winbond Electronics Corporation
Paket/Karton
-
Datenblatt
Herunterladen
Beschreibung
IC DRAM 512MBIT PARALLEL 60VFBGA
Lagerbestand
35000

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Hersteller :
Winbond Electronics Corporation
Produktkategorie :
Memory
Access Time :
5 ns
Clock Frequency :
200 MHz
Memory Format :
DRAM
Memory Interface :
Parallel
Memory Size :
512Mb (32M x 16)
Memory Type :
Volatile
Mounting Type :
Surface Mount
Operating Temperature :
-25°C ~ 85°C (TC)
Package / Case :
60-TFBGA
Product Status :
Active
Supplier Device Package :
60-VFBGA (8x9)
Technology :
SDRAM - Mobile LPDDR
Voltage - Supply :
1.7V ~ 1.95V
Write Cycle Time - Word, Page :
15ns
Datenblätter
W949D6DBHX5E TR

Herstellerbezogene Produkte

  • Winbond Electronics Corporation
    IC FLASH 2MBIT SPI 104MHZ 8SOIC
  • Winbond Electronics Corporation
    IC FLASH 2MBIT SPI 104MHZ 8USON
  • Winbond Electronics Corporation
    IC FLASH 8MBIT SPI 104MHZ 8SOIC
  • Winbond Electronics Corporation
    IC FLASH 4MBIT SPI 104MHZ 8SOIC
  • Winbond Electronics Corporation
    IC FLASH 8MBIT SPI 104MHZ 8USON

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