IGC10T65QEX1SA1
- Hersteller-Teilenummer
- IGC10T65QEX1SA1
- Hersteller
- Infineon Technologies
- Paket/Karton
- -
- Datenblatt
- Herunterladen
- Beschreibung
- IGBT CHIP
- Lagerbestand
- 35000
Angebot anfordern (RFQ)
- * Kontaktname:
- Unternehmen:
- * E-Mail:
- Telefon:
- Kommentar:
- Hersteller :
- Infineon Technologies
- Produktkategorie :
- Transistors - IGBTs - Single
- Current - Collector (Ic) (Max) :
- 20 A
- Current - Collector Pulsed (Icm) :
- 60 A
- Gate Charge :
- -
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- Die
- Power - Max :
- -
- Product Status :
- Obsolete
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- Die
- Switching Energy :
- -
- Td (on/off) @ 25°C :
- -
- Test Condition :
- -
- Vce(on) (Max) @ Vge, Ic :
- 2.32V @ 15V, 20A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
- Datenblätter
- IGC10T65QEX1SA1
Herstellerbezogene Produkte
Katalogbezogene Produkte
Ähnliche Produkte
| Teil | Hersteller | Lagerbestand | Beschreibung |
|---|---|---|---|
| IGC10251D | / | 1,000 | Electronic components |
| IGC10450D | BPS | 1,000 | Electronic components |
| IGC10551D | BPS | 1,000 | Electronic components |
| IGC10T65U8QX1SA1 | Infineon Technologies | 35,000 | IGBT CHIP |
| IGC10T65U8QX7SA1 | Infineon Technologies | 35,000 | IGBT CHIP |
| IGC11T120T8LX1SA1 | Infineon Technologies | 35,000 | IGBT 1200V 8A SAWN ON FOIL |
| IGC11T60TEX7SA1 | Infineon Technologies | 35,000 | IGBT 600V 11A WAFER |
| IGC132T75E8RD2CKAX7SA1 | Infineon Technologies | 35,000 | IGBT 750V |
| IGC13T120T8LX1SA1 | Infineon Technologies | 35,000 | IGBT 1200V 10A SAWN ON FOIL |
| IGC15T65QEX1SA1 | Infineon Technologies | 35,000 | IGBT CHIP |
| IGC18T120T8LX1SA2 | Infineon Technologies | 35,000 | IGBT 1200V 15A SAWN ON FOIL |
| IGC18T120T8QX1SA1 | Infineon Technologies | 35,000 | IGBT 1200V 15A DIE |
| IGC193T120T12RMAX7SA1 | Infineon Technologies | 35,000 | IGBT 1200V 200A |
