WG50N65DHWQ

Hersteller :

WeEn Semiconductors Co., Ltd

Produktkategorie :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

91 A

Current - Collector Pulsed (Icm) :

200 A

Gate Charge :

160 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-247-3

Power - Max :

278 W

Product Status :

Active

Reverse Recovery Time (trr) :

105 ns

Supplier Device Package :

TO-247-3

Switching Energy :

1.7mJ (on), 600µJ (off)

Td (on/off) @ 25°C :

66ns/163ns

Test Condition :

400V, 50A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 50A

Voltage - Collector Emitter Breakdown (Max) :

650 V