IGB50N65S5ATMA1

Hersteller :

Infineon Technologies

Produktkategorie :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

80 A

Current - Collector Pulsed (Icm) :

200 A

Gate Charge :

120 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Power - Max :

270 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

PG-TO263-3

Switching Energy :

1.23mJ (on), 740µJ (off)

Td (on/off) @ 25°C :

20ns/139ns

Test Condition :

400V, 50A, 8.2Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

1.7V @ 15V, 50A

Voltage - Collector Emitter Breakdown (Max) :

650 V