IGB30N60T

Hersteller-Teilenummer
IGB30N60T
Hersteller
Infineon Technologies
Paket/Karton
-
Datenblatt
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Beschreibung
IGB30N60 - DISCRETE IGBT WITHOUT
Lagerbestand
3594

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Hersteller :
Infineon Technologies
Produktkategorie :
Transistors - IGBTs - Single
Current - Collector (Ic) (Max) :
45 A
Current - Collector Pulsed (Icm) :
90 A
Gate Charge :
167 nC
IGBT Type :
Trench Field Stop
Input Type :
Standard
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 175°C (TJ)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max :
187 W
Product Status :
Active
Reverse Recovery Time (trr) :
-
Supplier Device Package :
PG-TO263-3-2
Switching Energy :
690µJ (on), 770µJ (off)
Td (on/off) @ 25°C :
23ns/254ns
Test Condition :
400V, 30A, 10.6Ohm, 15V
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 30A
Voltage - Collector Emitter Breakdown (Max) :
600 V
Datenblätter
IGB30N60T

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