FZ1800R12HP4B9NPSA1

Hersteller-Teilenummer
FZ1800R12HP4B9NPSA1
Hersteller
Infineon Technologies
Paket/Karton
-
Datenblatt
Herunterladen
Beschreibung
INSULATED GATE BIPOLAR TRANSISTO
Lagerbestand
105

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Hersteller :
Infineon Technologies
Produktkategorie :
Transistors - IGBTs - Modules
Configuration :
Single Switch
Current - Collector (Ic) (Max) :
2700 A
Current - Collector Cutoff (Max) :
5 mA
IGBT Type :
Trench
Input :
Standard
Input Capacitance (Cies) @ Vce :
110 nF @ 25 V
Mounting Type :
Chassis Mount
NTC Thermistor :
No
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Module
Power - Max :
10500 W
Product Status :
Active
Supplier Device Package :
AG-IHMB190
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 1.8kA
Voltage - Collector Emitter Breakdown (Max) :
1200 V
Datenblätter
FZ1800R12HP4B9NPSA1

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