LN100LA-G

Hersteller-Teilenummer
LN100LA-G
Hersteller
Microchip Technology
Paket/Karton
-
Datenblatt
Herunterladen
Beschreibung
MOSFET 2N-CH 1200V
Lagerbestand
35000

Angebot anfordern (RFQ)

* Kontaktname:
  Unternehmen:
* E-Mail:
  Telefon:
  Kommentar:
Hersteller :
Microchip Technology
Produktkategorie :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
-
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Standard
FET Type :
2 N-Channel (Cascoded)
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
50pF @ 25V
Mounting Type :
Surface Mount
Operating Temperature :
-25°C ~ 125°C (TJ)
Package / Case :
6-VFLGA
Power - Max :
350mW
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
3000Ohm @ 2mA, 2.8V
Supplier Device Package :
6-LFGA (3x3)
Vgs(th) (Max) @ Id :
1.6V @ 10µA
Datenblätter
LN100LA-G

Herstellerbezogene Produkte

Katalogbezogene Produkte

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

Ähnliche Produkte

Teil Hersteller Lagerbestand Beschreibung
LN1000J1K0E Ohmite 35,000 1000W 1000 OHMS SILI 5%
LN1000J500E Ohmite 1 LN1000J500E
LN1000J50RE Ohmite 2 LN1000J50RE
LN1000J750E Ohmite 1 LN1000J750E
LN1000J800E Ohmite 1 LN1000J800E
LN100F10KE Ohmite 2 RES CHAS MNT 10K OHM 1% 100W
LN100F7R0E Ohmite 35,000 RES CHAS MNT 7 OHM 1% 100W
LN100F916RE Ohmite 35,000 RES CHAS MNT 916 OHM 1% 100W
LN100J20RE Ohmite 35,000 100W 20 OHMS VIT 5%
LN100J500E Ohmite 35,000 LN100J500E
LN100J50R-B Ohmite 35,000 100W 50 OHMS VIT 5% - BULK
LN100J600 Ohmite 35,000 100W 600 OHMS VIT 5%
LN100J6R0E Ohmite 6 LN100J6R0E
LN100J75RE Ohmite 4 100W 75 OHMS VIT 5%
LN10304P Panasonic 35,000 LED GREEN DIFFUSED LEVEL METER