QJD1210SA2

Hersteller-Teilenummer
QJD1210SA2
Hersteller
Powerex, Inc.
Paket/Karton
-
Datenblatt
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Beschreibung
MOSFET 2N-CH 1200V 100A SIC
Lagerbestand
35000

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Hersteller :
Powerex, Inc.
Produktkategorie :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
100A
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
FET Feature :
Standard
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds :
8200pF @ 10V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Module
Power - Max :
415W
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
17mOhm @ 100A, 15V
Supplier Device Package :
Module
Vgs(th) (Max) @ Id :
1.6V @ 34mA
Datenblätter
QJD1210SA2

Herstellerbezogene Produkte

Katalogbezogene Produkte

  • EPC
    GANFET 2NCH 120V 3.4A DIE
  • EPC
    GAN TRANS SYMMETRICAL HALF BRIDG
  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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