2DB1132Q-13

Hersteller :

Diodes Incorporated

Produktkategorie :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

1 A

Current - Collector Cutoff (Max) :

500nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA, 3V

Frequency - Transition :

190MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-243AA

Power - Max :

1 W

Product Status :

Obsolete

Supplier Device Package :

SOT-89-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

32 V