2N1131

Hersteller-Teilenummer
2N1131
Hersteller
Microchip Technology
Paket/Karton
-
Datenblatt
Herunterladen
Beschreibung
POWER BJT
Lagerbestand
35000

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Hersteller :
Microchip Technology
Produktkategorie :
Transistors - Bipolar (BJT) - Single
Current - Collector (Ic) (Max) :
600 mA
Current - Collector Cutoff (Max) :
10mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
20 @ 150mA, 10V
Frequency - Transition :
-
Mounting Type :
Through Hole
Operating Temperature :
-65°C ~ 200°C (TJ)
Package / Case :
TO-205AD, TO-39-3 Metal Can
Power - Max :
600 mW
Product Status :
Active
Supplier Device Package :
TO-39 (TO-205AD)
Transistor Type :
PNP
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) :
40 V
Datenblätter
2N1131

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