DN350T05-7

Hersteller :

Diodes Incorporated

Produktkategorie :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA, 10V

Frequency - Transition :

50MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power - Max :

300 mW

Product Status :

Active

Supplier Device Package :

SOT-23-3

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

350 V