GE10022

Hersteller :

Harris Corporation

Produktkategorie :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

40 A

Current - Collector Cutoff (Max) :

250µA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 10A, 5V

Frequency - Transition :

-

Mounting Type :

Through Hole

Operating Temperature :

-65°C ~ 200°C (TJ)

Package / Case :

TO-204AE

Power - Max :

250 W

Product Status :

Active

Supplier Device Package :

TO-204AE

Transistor Type :

NPN - Darlington

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 1A, 20A

Voltage - Collector Emitter Breakdown (Max) :

240 V