2PA1774QMB315

Hersteller :

NXP Semiconductors

Produktkategorie :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA, 6V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

3-XFDFN

Power - Max :

250 mW

Product Status :

Active

Supplier Device Package :

DFN1006B-3

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Voltage - Collector Emitter Breakdown (Max) :

40 V