6A20GHB0G
- Hersteller-Teilenummer
- 6A20GHB0G
- Hersteller
- Taiwan Semiconductor
- Paket/Karton
- -
- Datenblatt
- Herunterladen
- Beschreibung
- DIODE GEN PURP 200V 6A R-6
- Lagerbestand
- 35000
Angebot anfordern (RFQ)
- * Kontaktname:
- Unternehmen:
- * E-Mail:
- Telefon:
- Kommentar:
- Hersteller :
- Taiwan Semiconductor
- Produktkategorie :
- Diodes - Rectifiers - Single
- Capacitance @ Vr, F :
- 60pF @ 4V, 1MHz
- Current - Average Rectified (Io) :
- 6A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 200 V
- Diode Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- R-6, Axial
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- R-6
- Voltage - DC Reverse (Vr) (Max) :
- 200 V
- Voltage - Forward (Vf) (Max) @ If :
- 1 V @ 6 A
- Datenblätter
- 6A20GHB0G
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|---|---|---|---|
| 6A20G | Taiwan Semiconductor | 35,000 | 6A, 200V, STANDARD RECOVERY RECT |
| 6A20G A0G | Taiwan Semiconductor | 35,000 | DIODE GEN PURP 200V 6A R-6 |
| 6A20G B0G | Taiwan Semiconductor | 35,000 | DIODE GEN PURP 200V 6A R-6 |
| 6A20G R0G | Taiwan Semiconductor | 35,000 | DIODE GEN PURP 200V 6A R-6 |
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