GC1100003
- Hersteller-Teilenummer
- GC1100003
- Hersteller
- Diodes Incorporated
- Paket/Karton
- -
- Datenblatt
- Herunterladen
- Beschreibung
- CRYSTAL METAL CAN 49S/SMD T&R 1K
- Lagerbestand
- 35000
Angebot anfordern (RFQ)
- * Kontaktname:
- Unternehmen:
- * E-Mail:
- Telefon:
- Kommentar:
- Hersteller :
- Diodes Incorporated
- Produktkategorie :
- Crystals
- ESR (Equivalent Series Resistance) :
- -
- Frequency :
- -
- Frequency Stability :
- -
- Frequency Tolerance :
- -
- Height - Seated (Max) :
- -
- Load Capacitance :
- -
- Mounting Type :
- -
- Operating Mode :
- Fundamental
- Operating Temperature :
- -
- Package / Case :
- -
- Product Status :
- Active
- Ratings :
- -
- Size / Dimension :
- -
- Type :
- MHz Crystal
- Datenblätter
- GC1100003
Herstellerbezogene Produkte
Katalogbezogene Produkte
Ähnliche Produkte
| Teil | Hersteller | Lagerbestand | Beschreibung |
|---|---|---|---|
| GC1100010 | Diodes Incorporated | 35,000 | CRYSTAL METAL CAN 49S/SMD T&R 1K |
| GC1100011 | Diodes Incorporated | 35,000 | CRYSTAL METAL CAN 49S/SMD T&R 1K |
| GC1100013 | Diodes Incorporated | 35,000 | CRYSTAL METAL CAN 49S/SMD T&R 1K |
| GC1100021 | Diodes Incorporated | 35,000 | CRYSTAL METAL CAN 49S/SMD T&R 1K |
| GC1115EVM | Texas Instruments | 35,000 | EVAL DAUGHTERBOARD-GC101 |
| GC1115IZDJ | Texas Instruments | 35,000 | IC WIDEBAND CFR PROCESSOR 256BGA |
| GC1115SEK | Texas Instruments | 35,000 | EVAL KIT FOR GC1115 |
| GC11N65F | Goford Semiconductor | 45 | N650V,RD(MAX)<360M@10V,VTH2.5V~4 |
| GC11N65K | Goford Semiconductor | 2,490 | N650V,RD(MAX)<360M@10V,VTH2.5V~4 |
| GC11N65M | Goford Semiconductor | 790 | N650V,RD(MAX)<360M@10V,VTH2.5V~4 |
| GC11N65T | Goford Semiconductor | 98 | N650V,RD(MAX)<360M@10V,VTH2.5V~4 |









