UJ4C075060B7S

制造商 :

UnitedSiC

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

25.8A (Tc)

Drain to Source Voltage (Vdss) :

750 V

Drive Voltage (Max Rds On, Min Rds On) :

12V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

37.8 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

1420 pF @ 400 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Power Dissipation (Max) :

128W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

74mOhm @ 20A, 12V

Supplier Device Package :

D2PAK-7

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

6V @ 10mA